SanDisk to Launch 43-Nanometer Multi-Level Nana Flash Memory in Mass ProductionCutting-Edge Process Technology Co-Developed With Toshiba Demonstrates Continued Technology and Manufacturing Leadership in MLC Flash Memory SAN FRANCISCO, CALIFORNIA, February 6, 2008— SanDisk Corporation (NASDAQ: SNDK) today announced the introduction of Multi-Level (MLC) NAND flash memory using 43 nanometer (nm) process technology co-developed with Toshiba Corporation in Japan. This 43nm technology advancement provides twice the density...
Read MoreSource: Imaging Resource (2008-02-14 15:00:12)